4
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
Figure 1. MRF8S9220HR3(HSR3) Test Circuit Component Layout
*C21, C22, C23, and C24 are mounted vertically.
CUT OUT AREA
MRF8S9XXXH
Rev. 1
R3
C10
R2
C9
C8
C7
R1
C1
C2
C3 C4
C5
C6
C21*
C23*
C25 C27
C29
C19
C17
C15
C14
C13
C12
C11
C16
C18
C20
C26 C28
C22*
C24*
C30
Table 5. MRF8S9220HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C8, C11, C23, C24
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C2
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C3, C12
1.0 pF Chip Capacitors
ATC100B1R0BT500XT
ATC
C4, C14
1.2 pF Chip Capacitors
ATC100B1R2BT500XT
ATC
C5
0.7 pF Chip Capacitor
ATC100B0R7BT500XT
ATC
C6, C7, C21, C22
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
C9
2.2 μF, 50 V Chip Capacitor
C1825C225J5RAC-TU
Kemet
C10
47 μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Capacitor
C13
1.3 pF Chip Capacitor
ATC100B1R3BT500XT
ATC
C15, C16
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C17
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C18
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C19, C20
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C25, C26, C27, C28
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C29, C30
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
R1
0 Ω, 3 A Chip Resistor
CRCW12060000Z0EA
Vishay
R2
3.3 Ω, 1/2 W Chip Resistor
P3.3VCT-ND
Panasonic
R3
2.2 kΩ, 1/4 W Chip Resistor
CRCW12062K20FKEA
Vishay
PCB
0.030″, εr
= 3.5
RF-35
Taconic
相关PDF资料
MRF8S9260HSR3 FET RF N-CH 960MHZ 70V NI-880HS
MRF9002NR2 MOSFET RF N-CHAN 26V 2W 16-PFP
MRF9030NBR1 IC MOSFET RF N-CHAN TO272-2
MRF9045LR1 IC MOSFET RF N-CHAN NI-360
MRF9045NBR1 IC MOSFET RF N-CHAN TO272-2
MRF9060LR5 IC MOSFET RF N-CHAN NI-360
MRF9080LR3 IC MOSFET RF N-CHAN NI-780
MRF9120LR3 IC MOSFET RF N-CHAN NI-860
相关代理商/技术参数
MRF8S9220HSR5 功能描述:射频MOSFET电源晶体管 HV8 WCDMA 66W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9232NR3 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 60W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9260HR3 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 260W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9260HR5 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 260W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9260HSR3 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 260W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S9260HSR5 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 260W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9002NR2 功能描述:射频MOSFET电源晶体管 FR PWR FET ARRAY PFP-16N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9002R2 制造商:MOT 功能描述:_